Browsing by Author "Altuntas, İsmail"
Now showing items 1-8 of 8
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Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
Demir, İlkay; Altuntas, İsmail; Elagöz, Sezai (07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
Altuntas, İsmail; Dakhlaoui, H.; Mora-Ramos, M. E.; Ungan, Fatih (15.11.2021)We are presenting a theoretical investigation on the effects of applied electric, magnetic, and non-resonant intense laser field on the coefficients of intersubband linear, third-order nonlinear, and total optical ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Gür, Emre; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Demir, İlkay (02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay (02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.11.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters
Altuntas, İsmail; Mora-Ramos, M. E.; Dakhlaoui, H.; Ungan, Fatih (26.07.2021)In this work, we present a theoretical simulation of the impact of applied external fields and structural parameters on the total (linear plus nonlinear) optical absorption coefficient (TOAC) and total refractive relative ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
Şenadım Tüzemen, Ebru; Özer, Ali; Altuntas, İsmail; Demir, İlkay; Şimşir, Mehmet (12.08.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...